IKW75N65ET7XKSA1
Infineon Technologies
Infineon Technologies
IKW75N65ET7XKSA1
$8.89
Available to order
Reference Price (USD)
1+
$8.89000
500+
$8.8011
1000+
$8.7122
1500+
$8.6233
2000+
$8.5344
2500+
$8.4455
Exquisite packaging
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Choose IKW75N65ET7XKSA1 Single IGBTs by Infineon Technologies for superior power handling in demanding environments. From railway systems to industrial drives, these transistors excel with features like avalanche ruggedness and integrated diodes. Their modular design simplifies installation and maintenance. Infineon Technologies's reputation for quality makes IKW75N65ET7XKSA1 a smart investment. Email us now for datasheets and volume discounts!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 225 A
- Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 75A
- Power - Max: 333 W
- Switching Energy: 2.17mJ (on), 1.23mJ (off)
- Input Type: Standard
- Gate Charge: 435 nC
- Td (on/off) @ 25°C: 28ns/310ns
- Test Condition: 400V, 75A, 4.7Ohm, 15V
- Reverse Recovery Time (trr): 100 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3
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