IKY50N120CH3XKSA1
Infineon Technologies
Infineon Technologies
IGBT 1200V 100A TO247-4
$12.36
Available to order
Reference Price (USD)
1+
$12.72000
10+
$11.68600
240+
$9.86988
720+
$8.77996
1,200+
$8.07352
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IKY50N120CH3XKSA1 Single IGBT from Infineon Technologies redefines reliability in power electronics. Tailored for renewable energy, telecom, and defense applications, it offers ultra-low switching losses and high-frequency operation. With anti-parallel diodes and short-circuit ratings, it s built for safety and performance. Infineon Technologies stands behind every IKY50N120CH3XKSA1 with unmatched customer service. Start your order process by contacting our sales team today!
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 100 A
- Current - Collector Pulsed (Icm): 200 A
- Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 50A
- Power - Max: 652 W
- Switching Energy: 2.3mJ (on), 1.9mJ (off)
- Input Type: Standard
- Gate Charge: 235 nC
- Td (on/off) @ 25°C: 32ns/296ns
- Test Condition: 600V, 50A, 10Ohm, 15V
- Reverse Recovery Time (trr): 255 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-4
- Supplier Device Package: PG-TO247-4
Related Products
Fairchild Semiconductor
HGT1S14N41G3VLS
STMicroelectronics
STGP3HF60HD
STMicroelectronics
STGB8NC60KDT4
Infineon Technologies
IKD03N60RF
Fairchild Semiconductor
ISL9V2040S3ST
Fairchild Semiconductor
FGA25S125P
IXYS
IXGH50N120C3
Rohm Semiconductor
RGTH00TS65GC13
Diodes Incorporated
DGTD65T60S2PT
onsemi