IMBG120R045M1HXTMA1
Infineon Technologies
Infineon Technologies
SICFET N-CH 1.2KV 47A TO263
$21.50
Available to order
Reference Price (USD)
1+
$21.50000
500+
$21.285
1000+
$21.07
1500+
$20.855
2000+
$20.64
2500+
$20.425
Exquisite packaging
Discount
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IMBG120R045M1HXTMA1 by Infineon Technologies is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, IMBG120R045M1HXTMA1 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 63mOhm @ 16A, 18V
- Vgs(th) (Max) @ Id: 5.7V @ 7.5mA
- Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 18 V
- Vgs (Max): +18V, -15V
- Input Capacitance (Ciss) (Max) @ Vds: 1527 pF @ 800 V
- FET Feature: Standard
- Power Dissipation (Max): 227W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-7-12
- Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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