IMBG120R220M1HXTMA1
Infineon Technologies
Infineon Technologies
SICFET N-CH 1.2KV 13A TO263
$10.71
Available to order
Reference Price (USD)
1+
$10.71000
500+
$10.6029
1000+
$10.4958
1500+
$10.3887
2000+
$10.2816
2500+
$10.1745
Exquisite packaging
Discount
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Boost your electronic applications with IMBG120R220M1HXTMA1, a reliable Transistors - FETs, MOSFETs - Single by Infineon Technologies. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, IMBG120R220M1HXTMA1 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 294mOhm @ 4A, 18V
- Vgs(th) (Max) @ Id: 5.7V @ 1.6mA
- Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 18 V
- Vgs (Max): +18V, -15V
- Input Capacitance (Ciss) (Max) @ Vds: 312 pF @ 800 V
- FET Feature: Standard
- Power Dissipation (Max): 83W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-7-12
- Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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