IMW120R090M1HXKSA1
Infineon Technologies
Infineon Technologies
SICFET N-CH 1.2KV 26A TO247-3
$13.15
Available to order
Reference Price (USD)
1+
$13.15000
500+
$13.0185
1000+
$12.887
1500+
$12.7555
2000+
$12.624
2500+
$12.4925
Exquisite packaging
Discount
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IMW120R090M1HXKSA1 by Infineon Technologies is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, IMW120R090M1HXKSA1 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
- Rds On (Max) @ Id, Vgs: 117mOhm @ 8.5A, 18V
- Vgs(th) (Max) @ Id: 5.7V @ 3.7mA
- Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 18 V
- Vgs (Max): +23V, -7V
- Input Capacitance (Ciss) (Max) @ Vds: 707 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 115W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3-41
- Package / Case: TO-247-3
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