IPA60R060C7XKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 600V 16A TO220
$7.61
Available to order
Reference Price (USD)
500+
$5.09522
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover IPA60R060C7XKSA1, a versatile Transistors - FETs, MOSFETs - Single solution from Infineon Technologies, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 60mOhm @ 15.9A, 10V
- Vgs(th) (Max) @ Id: 4V @ 800µA
- Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 34W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-FP
- Package / Case: TO-220-3 Full Pack
Related Products
Fairchild Semiconductor
HUFA76423D3ST
Infineon Technologies
IPB010N06NATMA1
Infineon Technologies
IRFS3306TRLPBF
Rohm Semiconductor
RQ5L015SPTL
onsemi
2SK1421
Infineon Technologies
ISC019N03L5SATMA1
Infineon Technologies
BSZ018NE2LSIATMA1
Rohm Semiconductor
BSS138BWAHZGT106
Infineon Technologies
IRFR1205TRPBF
Rohm Semiconductor