IPA60R160P7XKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 600V 20A TO220
$3.80
Available to order
Reference Price (USD)
1+
$3.80000
500+
$3.762
1000+
$3.724
1500+
$3.686
2000+
$3.648
2500+
$3.61
Exquisite packaging
Discount
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Boost your electronic applications with IPA60R160P7XKSA1, a reliable Transistors - FETs, MOSFETs - Single by Infineon Technologies. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, IPA60R160P7XKSA1 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 160mOhm @ 6.3A, 10V
- Vgs(th) (Max) @ Id: 4V @ 350µA
- Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1317 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 26W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220 Full Pack
- Package / Case: TO-220-3 Full Pack
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