IPA65R190C7XKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 650V 8A TO220-FP
$3.98
Available to order
Reference Price (USD)
1+
$3.35000
10+
$3.02900
100+
$2.43440
500+
$1.89344
1,000+
$1.56884
Exquisite packaging
Discount
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Optimize your electronic systems with IPA65R190C7XKSA1, a high-quality Transistors - FETs, MOSFETs - Single from Infineon Technologies. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, IPA65R190C7XKSA1 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 190mOhm @ 5.7A, 10V
- Vgs(th) (Max) @ Id: 4V @ 290µA
- Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 30W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-FP
- Package / Case: TO-220-3 Full Pack
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