IPA80R650CEXKSA2
Infineon Technologies
Infineon Technologies
MOSFET N-CH 800V 8A TO220-3F
$2.91
Available to order
Reference Price (USD)
1+
$2.20000
10+
$1.98400
100+
$1.59440
500+
$1.24008
1,000+
$1.02750
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with IPA80R650CEXKSA2 by Infineon Technologies, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, IPA80R650CEXKSA2 ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 650mOhm @ 5.1A, 10V
- Vgs(th) (Max) @ Id: 3.9V @ 470µA
- Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 33W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3F
- Package / Case: TO-220-3 Full Pack
Related Products
Vishay Siliconix
SIHG33N65EF-GE3
onsemi
FDT86246L
IXYS
IXFH18N60P
Vishay Siliconix
SIDR610EP-T1-RE3
Fairchild Semiconductor
RFD16N05NL
Vishay Siliconix
IRFR210PBF
STMicroelectronics
STS8N6LF6AG
Renesas Electronics America Inc
NP100N04PUK(1)-E1-AY
Fairchild Semiconductor
HUF76409D3ST
Vishay Siliconix