IPA90R500C3XKSA2
Infineon Technologies
Infineon Technologies
MOSFET N-CH 900V 11A TO220
$2.91
Available to order
Reference Price (USD)
1+
$2.91460
500+
$2.885454
1000+
$2.856308
1500+
$2.827162
2000+
$2.798016
2500+
$2.76887
Exquisite packaging
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose IPA90R500C3XKSA2 by Infineon Technologies. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with IPA90R500C3XKSA2 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 900 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 740µA
- Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 34W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-FP
- Package / Case: TO-220-3 Full Pack
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