IPB052N04NG
Infineon Technologies
Infineon Technologies
N-CHANNEL POWER MOSFET
$0.40
Available to order
Reference Price (USD)
1+
$0.40000
500+
$0.396
1000+
$0.392
1500+
$0.388
2000+
$0.384
2500+
$0.38
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
IPB052N04NG by Infineon Technologies is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, IPB052N04NG ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
Related Products
Diodes Incorporated
DMTH4004SK3-13
Nexperia USA Inc.
BUK768R3-60E,118
Toshiba Semiconductor and Storage
TJ40S04M3L,LXHQ
IXYS
IXFX320N17T2
Infineon Technologies
IRF9Z34NSTRLPBF
EPC
EPC2212
onsemi
FQB34P10TM
Infineon Technologies
IRF640NSTRRPBF
onsemi
NVMFS4C01NT3G
Vishay Siliconix