IPB120P04P404ATMA2
Infineon Technologies
Infineon Technologies
MOSFET P-CH 40V 120A TO263-3
$4.14
Available to order
Reference Price (USD)
1+
$4.14000
500+
$4.0986
1000+
$4.0572
1500+
$4.0158
2000+
$3.9744
2500+
$3.933
Exquisite packaging
Discount
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Infineon Technologies presents IPB120P04P404ATMA2, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, IPB120P04P404ATMA2 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 3.8mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 4V @ 340µA
- Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 14790 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 136W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3-2
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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