IPB160N04S3H2ATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 40V 160A TO263-7
$2.99
Available to order
Reference Price (USD)
1,000+
$1.34267
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with IPB160N04S3H2ATMA1, a reliable Transistors - FETs, MOSFETs - Single by Infineon Technologies. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, IPB160N04S3H2ATMA1 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 2.1mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id: 4V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 214W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-7-3
- Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Related Products
Infineon Technologies
IPP80N06S2L06AKSA1
onsemi
NTLJS5D0N03CTAG
Toshiba Semiconductor and Storage
TJ8S06M3L(T6L1,NQ)
Infineon Technologies
IRFH8303TRPBF
Vishay Siliconix
SQJA84EP-T1_GE3
onsemi
NTTFS002N04CTAG
onsemi
NVTFWS015N04CTAG
Vishay Siliconix
SI7806ADN-T1-GE3
Rohm Semiconductor
RHK003N06FRAT146
Rohm Semiconductor