IPB60R080P7ATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 650V 37A D2PAK
$6.85
Available to order
Reference Price (USD)
1,000+
$2.96835
2,000+
$2.81994
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with IPB60R080P7ATMA1, a reliable Transistors - FETs, MOSFETs - Single by Infineon Technologies. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, IPB60R080P7ATMA1 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 80mOhm @ 11.8A, 10V
- Vgs(th) (Max) @ Id: 4V @ 590µA
- Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 129W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
IXYS
IXTP34N65X2
Renesas Electronics America Inc
RJK6026DPP-00#T2
onsemi
FDPF8N50NZ
Vishay Siliconix
SIS892DN-T1-GE3
Infineon Technologies
IRL3803VSPBF
Toshiba Semiconductor and Storage
SSM6K405TU,LF
Vishay Siliconix
SQJA06EP-T1_GE3
Renesas Electronics America Inc
UPA2746UT1A-E2-AY
Renesas Electronics America Inc
2SK1288-AZ
STMicroelectronics