IPB65R110CFDATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 650V 31.2A D2PAK
$5.47
Available to order
Reference Price (USD)
1,000+
$3.30638
2,000+
$3.14106
Exquisite packaging
Discount
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Discover high-performance IPB65R110CFDATMA1 from Infineon Technologies, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, IPB65R110CFDATMA1 delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 110mOhm @ 12.7A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 1.3mA
- Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 277.8W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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