IPB65R380C6ATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 650V 10.6A D2PAK
$0.85
Available to order
Reference Price (USD)
1+
$0.85000
500+
$0.8415
1000+
$0.833
1500+
$0.8245
2000+
$0.816
2500+
$0.8075
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit performance with IPB65R380C6ATMA1, a premium Transistors - FETs, MOSFETs - Single from Infineon Technologies. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust IPB65R380C6ATMA1 for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 320µA
- Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 83W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
onsemi
NTMFS5C673NLT1G
IXYS
IXTQ74N20P
onsemi
NTTFS4C10NTWG
onsemi
NVMFS5C423NLWFAFT1G
onsemi
MMDF3N02HDR2G
Alpha & Omega Semiconductor Inc.
AOTF2618L
STMicroelectronics
STB30N65M2AG
Nexperia USA Inc.
BSH111BKR
Panjit International Inc.
BSS123_R1_00001
STMicroelectronics