IPB65R420CFD
Infineon Technologies
Infineon Technologies
N-CHANNEL POWER MOSFET
$0.75
Available to order
Reference Price (USD)
1+
$0.75000
500+
$0.7425
1000+
$0.735
1500+
$0.7275
2000+
$0.72
2500+
$0.7125
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with IPB65R420CFD, a high-quality Transistors - FETs, MOSFETs - Single from Infineon Technologies. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, IPB65R420CFD provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 420mOhm @ 3.4A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 300µA
- Gate Charge (Qg) (Max) @ Vgs: 31.5 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 83.3W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3-2
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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