IPB70N10S312ATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 100V 70A TO263-3
$3.45
Available to order
Reference Price (USD)
1,000+
$0.90341
2,000+
$0.84111
5,000+
$0.80995
10,000+
$0.79296
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with IPB70N10S312ATMA1, a reliable Transistors - FETs, MOSFETs - Single by Infineon Technologies. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, IPB70N10S312ATMA1 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 11.3mOhm @ 70A, 10V
- Vgs(th) (Max) @ Id: 4V @ 83µA
- Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4355 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3-2
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Vishay Siliconix
SIS406DN-T1-GE3
STMicroelectronics
STF4LN80K5
Infineon Technologies
IPA90R1K2C3XKSA2
onsemi
NDF03N60ZH
Diodes Incorporated
DMP65H11D0HSS-13
Vishay Siliconix
SISA14DN-T1-GE3
STMicroelectronics
STF22N60M6
Diodes Incorporated
DMP4015SK3-13
Diodes Incorporated
DMP3010LK3-13
Microchip Technology