IPD18DP10LMATMA1
Infineon Technologies
Infineon Technologies
TRENCH >=100V PG-TO252-3
$1.77
Available to order
Reference Price (USD)
1+
$1.77000
500+
$1.7523
1000+
$1.7346
1500+
$1.7169
2000+
$1.6992
2500+
$1.6815
Exquisite packaging
Discount
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Optimize your electronic systems with IPD18DP10LMATMA1, a high-quality Transistors - FETs, MOSFETs - Single from Infineon Technologies. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, IPD18DP10LMATMA1 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), 13.9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 178mOhm @ 13A, 10V
- Vgs(th) (Max) @ Id: 2V @ 1.04mA
- Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 83W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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