IPD35N10S3L26ATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 100V 35A TO252-31
$1.91
Available to order
Reference Price (USD)
2,500+
$0.47140
5,000+
$0.44782
12,500+
$0.43099
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Infineon Technologies presents IPD35N10S3L26ATMA1, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, IPD35N10S3L26ATMA1 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 24mOhm @ 35A, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 39µA
- Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 71W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3-11
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Infineon Technologies
IPC100N04S5L1R9ATMA1
STMicroelectronics
STD8N65M5
Infineon Technologies
IPW60R125CPFKSA1
Fairchild Semiconductor
FDB8896-F085
Infineon Technologies
BSZ021N04LS6ATMA1
Goford Semiconductor
60N06
Vishay Siliconix
SIHF8N50D-E3
onsemi
NTTD4401FR2
Nexperia USA Inc.
PMN48XPA,115
onsemi