IPD40DP06NMATMA1
Infineon Technologies
Infineon Technologies
MOSFET P-CH 60V 4.3A TO252-3
$0.48
Available to order
Reference Price (USD)
1+
$0.47980
500+
$0.475002
1000+
$0.470204
1500+
$0.465406
2000+
$0.460608
2500+
$0.45581
Exquisite packaging
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Experience the power of IPD40DP06NMATMA1, a premium Transistors - FETs, MOSFETs - Single from Infineon Technologies. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, IPD40DP06NMATMA1 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 400mOhm @ 4.3A, 10V
- Vgs(th) (Max) @ Id: 4V @ 166µA
- Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 19W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3-313
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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