IPD50P03P4L11ATMA2
Infineon Technologies
Infineon Technologies
MOSFET P-CH 30V 50A TO252-31
$1.79
Available to order
Reference Price (USD)
1+
$1.79000
500+
$1.7721
1000+
$1.7542
1500+
$1.7363
2000+
$1.7184
2500+
$1.7005
Exquisite packaging
Discount
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Boost your electronic applications with IPD50P03P4L11ATMA2, a reliable Transistors - FETs, MOSFETs - Single by Infineon Technologies. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, IPD50P03P4L11ATMA2 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 10.5mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 2V @ 85µA
- Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
- Vgs (Max): +5V, -16V
- Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 58W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3-11
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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