IPD50R500CEAUMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 550V 7.6A TO252
$1.15
Available to order
Reference Price (USD)
2,500+
$0.40841
5,000+
$0.38324
12,500+
$0.37066
25,000+
$0.36379
Exquisite packaging
Discount
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Discover IPD50R500CEAUMA1, a versatile Transistors - FETs, MOSFETs - Single solution from Infineon Technologies, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 550 V
- Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 13V
- Rds On (Max) @ Id, Vgs: 500mOhm @ 2.3A, 13V
- Vgs(th) (Max) @ Id: 3.5V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs: 18.7 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 433 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 57W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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