IPD60R380C6ATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 600V 10.6A TO252-3
$2.56
Available to order
Reference Price (USD)
2,500+
$0.95107
5,000+
$0.91984
12,500+
$0.90280
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Infineon Technologies presents IPD60R380C6ATMA1, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, IPD60R380C6ATMA1 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 320µA
- Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 83W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
STMicroelectronics
STD9HN65M2
Micro Commercial Co
SI5618-TP
onsemi
NTMFS5C612NT1G-TE
Rohm Semiconductor
RK7002BMT116
Infineon Technologies
BSC035N10NS5ATMA1
Infineon Technologies
IPP60R280P6XKSA1
onsemi
NTD3055-094T4G
Microchip Technology
APT17F100B
IXYS
IXTQ40N50L2
Alpha & Omega Semiconductor Inc.