IPD75N04S406ATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 40V 75A TO252-3
$1.27
Available to order
Reference Price (USD)
2,500+
$0.40748
5,000+
$0.38711
12,500+
$0.37256
25,000+
$0.37044
Exquisite packaging
Discount
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Boost your electronic applications with IPD75N04S406ATMA1, a reliable Transistors - FETs, MOSFETs - Single by Infineon Technologies. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, IPD75N04S406ATMA1 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 5.9mOhm @ 75A, 10V
- Vgs(th) (Max) @ Id: 4V @ 26µA
- Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 58W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3-313
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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