IPD900P06NMATMA1
Infineon Technologies
Infineon Technologies
MOSFET P-CH 60V 16.4A TO252
$0.68
Available to order
Reference Price (USD)
1+
$0.68240
500+
$0.675576
1000+
$0.668752
1500+
$0.661928
2000+
$0.655104
2500+
$0.64828
Exquisite packaging
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose IPD900P06NMATMA1 by Infineon Technologies. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with IPD900P06NMATMA1 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 16.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 90mOhm @ 16.4A, 10V
- Vgs(th) (Max) @ Id: 4V @ 710µA
- Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 63W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3-313
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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