IPD90N03S4L03ATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 30V 90A TO252-3
$1.79
Available to order
Reference Price (USD)
2,500+
$0.54932
5,000+
$0.52185
12,500+
$0.50223
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Infineon Technologies presents IPD90N03S4L03ATMA1, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, IPD90N03S4L03ATMA1 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 3.3mOhm @ 90A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 45µA
- Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
- Vgs (Max): ±16V
- Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 94W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3-11
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Fairchild Semiconductor
ISL9N322AP3
Fairchild Semiconductor
FDPF8N50NZF
onsemi
FDMS86180
STMicroelectronics
STF130N10F3
Renesas Electronics America Inc
NP22N055ILE-E1-AY
onsemi
MTD5N25E1
IXYS
IXFN100N50Q3
Alpha & Omega Semiconductor Inc.
AOWF190A60C
STMicroelectronics
STD16N50M2
onsemi