IPD90R1K2C3ATMA2
Infineon Technologies
Infineon Technologies
MOSFET N-CH 900V 2.1A TO252-3
$1.21
Available to order
Reference Price (USD)
1+
$1.21100
500+
$1.19889
1000+
$1.18678
1500+
$1.17467
2000+
$1.16256
2500+
$1.15045
Exquisite packaging
Discount
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Enhance your circuit performance with IPD90R1K2C3ATMA2, a premium Transistors - FETs, MOSFETs - Single from Infineon Technologies. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust IPD90R1K2C3ATMA2 for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 900 V
- Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.8A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 0.31mA
- Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 83W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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