IPDD60R080G7XTMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 600V 29A HDSOP-10
$9.15
Available to order
Reference Price (USD)
1,700+
$3.73552
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with IPDD60R080G7XTMA1, a high-quality Transistors - FETs, MOSFETs - Single from Infineon Technologies. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, IPDD60R080G7XTMA1 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 80mOhm @ 9.7A, 10V
- Vgs(th) (Max) @ Id: 4V @ 490µA
- Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 174W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HDSOP-10-1
- Package / Case: 10-PowerSOP Module
Related Products
onsemi
NDD60N900U1T4G
Toshiba Semiconductor and Storage
SSM3J351R,LXHF
Infineon Technologies
IPS105N03LG
Microchip Technology
APT10090BFLLG
Panjit International Inc.
PJL9436A_R2_00001
STMicroelectronics
STD9NM40N
Rectron USA
RM3010
Vishay Siliconix
IRFI9540GPBF
onsemi
NTMSD6N303R2
Infineon Technologies