IPDD60R105CFD7XTMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 600V 31A HDSOP-10
$6.97
Available to order
Reference Price (USD)
1+
$6.97000
500+
$6.9003
1000+
$6.8306
1500+
$6.7609
2000+
$6.6912
2500+
$6.6215
Exquisite packaging
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Enhance your circuit performance with IPDD60R105CFD7XTMA1, a premium Transistors - FETs, MOSFETs - Single from Infineon Technologies. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust IPDD60R105CFD7XTMA1 for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 105mOhm @ 7.8A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 390µA
- Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1504 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 198W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HDSOP-10-1
- Package / Case: 10-PowerSOP Module
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