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IPG20N04S4L08ATMA1

Infineon Technologies
IPG20N04S4L08ATMA1 Preview
Infineon Technologies
MOSFET 2N-CH 40V 20A 8TDSON
$1.71
Available to order
Reference Price (USD)
5,000+
$0.62163
10,000+
$0.59826
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 20A
  • Rds On (Max) @ Id, Vgs: 8.2mOhm @ 17A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 22µA
  • Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3050pF @ 25V
  • Power - Max: 54W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PG-TDSON-8-4

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