IPG20N06S2L35AATMA1
Infineon Technologies
Infineon Technologies
MOSFET 2N-CH 55V 2A 8TDSON
$1.46
Available to order
Reference Price (USD)
5,000+
$0.67298
10,000+
$0.64768
Exquisite packaging
Discount
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The IPG20N06S2L35AATMA1 by Infineon Technologies is a standout in the Discrete Semiconductor Products category, specifically for Transistors - FETs, MOSFETs - Arrays. Engineered for excellence, these components offer unmatched reliability and performance. Features such as high voltage tolerance, low gate charge, and superior thermal management make them a preferred choice. Applications range from industrial automation to consumer electronics. Don t miss out on the opportunity to integrate IPG20N06S2L35AATMA1 into your systems contact us for more details and pricing.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Rds On (Max) @ Id, Vgs: 35mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 2V @ 27µA
- Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 25V
- Power - Max: 65W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Package / Case: 8-PowerVDFN
- Supplier Device Package: PG-TDSON-8-10
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