IPG20N06S415AATMA1
Infineon Technologies
Infineon Technologies
MOSFET 2N-CH 60V 20A 8TDSON
$1.68
Available to order
Reference Price (USD)
5,000+
$0.78250
10,000+
$0.76608
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IPG20N06S415AATMA1 from Infineon Technologies is a top choice in the Discrete Semiconductor Products category, particularly for Transistors - FETs, MOSFETs - Arrays. With features like high breakdown voltage, low gate drive, and excellent thermal performance, these components are ideal for power electronics and high-frequency applications. Whether for consumer electronics or industrial machinery, IPG20N06S415AATMA1 delivers consistent quality. Contact us now to learn more and secure your supply of Infineon Technologies s premium semiconductors.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 20A
- Rds On (Max) @ Id, Vgs: 15.5mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id: 4V @ 20µA
- Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2260pF @ 25V
- Power - Max: 50W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Package / Case: 8-PowerVDFN
- Supplier Device Package: PG-TDSON-8-10
Related Products
Fairchild Semiconductor
FW276-TL-2H
STMicroelectronics
STS4DPF20L
Diodes Incorporated
DMN62D0UDWQ-7
Fairchild Semiconductor
HUF75842S3
Taiwan Semiconductor Corporation
TSM500P02DCQ RFG
Diodes Incorporated
DMN2710UDWQ-13
Nexperia USA Inc.
BUK9K32-100EX
Diodes Incorporated
DMN2053UFDB-7
Diodes Incorporated
ZXMHC3F381N8TC
Alpha & Omega Semiconductor Inc.