IPG20N06S4L14ATMA2
Infineon Technologies
Infineon Technologies
MOSFET 2N-CH 60V 20A 8TDSON
$0.84
Available to order
Reference Price (USD)
5,000+
$0.63011
Exquisite packaging
Discount
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The IPG20N06S4L14ATMA2 by Infineon Technologies is a must-have in the Discrete Semiconductor Products category, specifically for Transistors - FETs, MOSFETs - Arrays. Designed for high-performance applications, these components feature low RDS(on), high power density, and excellent reliability. They are widely used in automotive, aerospace, and industrial electronics. Let Infineon Technologies s IPG20N06S4L14ATMA2 be the backbone of your next project contact us for more information and to place your order.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 20A
- Rds On (Max) @ Id, Vgs: 13.7mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 20µA
- Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2890pF @ 25V
- Power - Max: 50W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerVDFN
- Supplier Device Package: PG-TDSON-8-4
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