IPG20N06S4L26AATMA1
Infineon Technologies
Infineon Technologies
MOSFET 2N-CH 60V 20A 8TDSON
$1.34
Available to order
Reference Price (USD)
5,000+
$0.42705
10,000+
$0.41100
Exquisite packaging
Discount
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Experience the next level of semiconductor technology with Infineon Technologies s IPG20N06S4L26AATMA1, part of the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are built to deliver exceptional performance with features like high current capacity, minimal power loss, and enhanced durability. Suitable for a wide array of applications including LED lighting, automotive systems, and renewable energy solutions. Get in touch with us today to request a sample or inquire about bulk pricing for IPG20N06S4L26AATMA1.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 20A
- Rds On (Max) @ Id, Vgs: 26mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 10µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1430pF @ 25V
- Power - Max: 33W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Package / Case: 8-PowerVDFN
- Supplier Device Package: PG-TDSON-8-10
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