IPI70N10S3L12AKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 100V 70A TO262-3
$0.61
Available to order
Reference Price (USD)
1+
$0.61000
500+
$0.6039
1000+
$0.5978
1500+
$0.5917
2000+
$0.5856
2500+
$0.5795
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with IPI70N10S3L12AKSA1, a high-quality Transistors - FETs, MOSFETs - Single from Infineon Technologies. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, IPI70N10S3L12AKSA1 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 12.1mOhm @ 70A, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 83µA
- Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 5550 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO262-3
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Related Products
IXYS
IXFH30N50P
Infineon Technologies
IRFB7546PBF
Nexperia USA Inc.
PXP018-20QXJ
Alpha & Omega Semiconductor Inc.
AOTF600A60L
Panjit International Inc.
PJA138L_R1_00001
Vishay Siliconix
SIA431DJ-T1-GE3
onsemi
FDP20N50F
Nexperia USA Inc.
PSMN021-100YLX
Vishay Siliconix
SI7112DN-T1-E3
onsemi