IPN60R600P7SATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CHANNEL 600V 6A SOT223
$1.11
Available to order
Reference Price (USD)
3,000+
$0.34665
6,000+
$0.32529
15,000+
$0.31460
30,000+
$0.30878
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with IPN60R600P7SATMA1 by Infineon Technologies, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, IPN60R600P7SATMA1 ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
- Vgs(th) (Max) @ Id: 4V @ 80µA
- Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 7W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT223
- Package / Case: TO-261-4, TO-261AA
Related Products
Infineon Technologies
IPP034N03LG
onsemi
NVD5C460NT4G
Fairchild Semiconductor
FDG314P
Toshiba Semiconductor and Storage
TK6P53D(T6RSS-Q)
Infineon Technologies
ISC012N04NM6ATMA1
Infineon Technologies
IRFH5006TRPBF
Microchip Technology
APT30M19JVFR
Vishay Siliconix
SI7634BDP-T1-E3
Vishay Siliconix
SI1050X-T1-GE3
Infineon Technologies