IPP050N10NF2SAKMA1
Infineon Technologies
Infineon Technologies
TRENCH >=100V
$3.34
Available to order
Reference Price (USD)
1+
$3.34000
500+
$3.3066
1000+
$3.2732
1500+
$3.2398
2000+
$3.2064
2500+
$3.173
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with IPP050N10NF2SAKMA1, a high-quality Transistors - FETs, MOSFETs - Single from Infineon Technologies. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, IPP050N10NF2SAKMA1 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 19.4A (Ta), 110A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 5mOhm @ 60A, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 84µA
- Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 150W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3
- Package / Case: TO-220-3
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