IPP052NE7N3GXKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 75V 80A TO220-3
$3.36
Available to order
Reference Price (USD)
1+
$2.81000
10+
$2.55400
100+
$2.08210
500+
$1.65244
1,000+
$1.39462
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with IPP052NE7N3GXKSA1, a reliable Transistors - FETs, MOSFETs - Single by Infineon Technologies. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, IPP052NE7N3GXKSA1 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75 V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 5.2mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 91µA
- Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 37.5 V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-1
- Package / Case: TO-220-3
Related Products
Texas Instruments
CSD16321Q5
Vishay Siliconix
IRF820APBF-BE3
onsemi
IRFM120ATF
Vishay Siliconix
SIR872DP-T1-GE3
onsemi
NTMFS4C020NT1G
Yangzhou Yangjie Electronic Technology Co.,Ltd
2N7002-F2-0000HF
Microchip Technology
VN2224N3-G
IXYS
IXFR180N15P
Renesas Electronics America Inc
UPA1807GR-9JG-E1-A
onsemi