IPP062NE7N3GXKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 75V 80A TO220-3
$1.79
Available to order
Reference Price (USD)
500+
$1.35096
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of IPP062NE7N3GXKSA1, a premium Transistors - FETs, MOSFETs - Single from Infineon Technologies. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, IPP062NE7N3GXKSA1 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75 V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 6.2mOhm @ 73A, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 70µA
- Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3840 pF @ 37.5 V
- FET Feature: -
- Power Dissipation (Max): 136W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3
- Package / Case: TO-220-3
Related Products
Infineon Technologies
IRFU3707ZPBF
Infineon Technologies
SPB02N60C3
IXYS
IXTP86N20X4
Diodes Incorporated
ZXMP10A13FQTA
Infineon Technologies
IPW60R080P7XKSA1
Diotec Semiconductor
MMFTP5618
Alpha & Omega Semiconductor Inc.
AOT11S65L
onsemi
FCP850N80Z
Infineon Technologies
BF2040E6814HTSA
Vishay Siliconix