IPP129N10NF2SAKMA1
Infineon Technologies
Infineon Technologies
TRENCH >=100V
$1.95
Available to order
Reference Price (USD)
1+
$1.95000
500+
$1.9305
1000+
$1.911
1500+
$1.8915
2000+
$1.872
2500+
$1.8525
Exquisite packaging
Discount
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IPP129N10NF2SAKMA1 by Infineon Technologies is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, IPP129N10NF2SAKMA1 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 52A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 12.9mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 30µA
- Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 71W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3
- Package / Case: TO-220-3
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