IPP50R280CEXKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 500V 13A TO220-3
$1.78
Available to order
Reference Price (USD)
1+
$1.59000
10+
$1.42100
100+
$1.13840
500+
$0.89970
1,000+
$0.72606
Exquisite packaging
Discount
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Discover high-performance IPP50R280CEXKSA1 from Infineon Technologies, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, IPP50R280CEXKSA1 delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 13V
- Rds On (Max) @ Id, Vgs: 280mOhm @ 4.2A, 13V
- Vgs(th) (Max) @ Id: 3.5V @ 350µA
- Gate Charge (Qg) (Max) @ Vgs: 32.6 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 773 pF @ 100 V
- FET Feature: Super Junction
- Power Dissipation (Max): 92W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-1
- Package / Case: TO-220-3
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