IPP60R099CPXKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 650V 31A TO220-3
$10.75
Available to order
Reference Price (USD)
500+
$5.59650
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with IPP60R099CPXKSA1, a high-quality Transistors - FETs, MOSFETs - Single from Infineon Technologies. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, IPP60R099CPXKSA1 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 99mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
- Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 255W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3
- Package / Case: TO-220-3
Related Products
Vishay Siliconix
SQJ433EP-T1_BE3
Vishay Siliconix
SQS462EN-T1_GE3
STMicroelectronics
STF57N65M5
Toshiba Semiconductor and Storage
TK25S06N1L,LXHQ
Diodes Incorporated
DMN3024LK3-13
STMicroelectronics
STW9NK90Z
onsemi
3LP01S-K-TL-E
Infineon Technologies
IRLML6344TRPBF
NXP USA Inc.
PMN40LN,135
onsemi