IPP60R250CPXKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 650V 12A TO220-3
$2.82
Available to order
Reference Price (USD)
1+
$3.62000
10+
$3.25000
100+
$2.70320
500+
$2.22888
1,000+
$1.91268
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with IPP60R250CPXKSA1, a high-quality Transistors - FETs, MOSFETs - Single from Infineon Technologies. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, IPP60R250CPXKSA1 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 250mOhm @ 7.8A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 440µA
- Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 104W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3
- Package / Case: TO-220-3
Related Products
Infineon Technologies
IPN70R1K2P7SATMA1
Alpha & Omega Semiconductor Inc.
AOB12N65L
STMicroelectronics
STB38N65M5
Vishay Siliconix
SI2307BDS-T1-E3
Transphorm
TP65H070LDG-TR
Nexperia USA Inc.
PMN70EPEX
Toshiba Semiconductor and Storage
SSM3J15FS,LF
Diodes Incorporated
DMP68D0LFB-7B
Siemens
BUZ111SLE3045A
Infineon Technologies