IPP60R600P6XKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 600V 7.3A TO220-3
$0.56
Available to order
Reference Price (USD)
1+
$0.56000
500+
$0.5544
1000+
$0.5488
1500+
$0.5432
2000+
$0.5376
2500+
$0.532
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit performance with IPP60R600P6XKSA1, a premium Transistors - FETs, MOSFETs - Single from Infineon Technologies. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust IPP60R600P6XKSA1 for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 557 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 63W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3
- Package / Case: TO-220-3
Related Products
Toshiba Semiconductor and Storage
TK380A65Y,S4X
Infineon Technologies
IRLR2705TRLPBF
IXYS
IXFN140N30P
Taiwan Semiconductor Corporation
TSM70N380CH C5G
Infineon Technologies
IPD60R800CEAUMA1
Nexperia USA Inc.
BUK961R6-40E,118
Micro Commercial Co
MCU15N10A-TP
Alpha & Omega Semiconductor Inc.
AOWF12T60P
Vishay Siliconix
IRLZ24SPBF
STMicroelectronics