IPS80R600P7AKMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 800V 8A TO251-3
$0.83
Available to order
Reference Price (USD)
1+
$1.86000
10+
$1.64600
100+
$1.30110
500+
$1.00906
1,000+
$0.79662
Exquisite packaging
Discount
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Optimize your electronic systems with IPS80R600P7AKMA1, a high-quality Transistors - FETs, MOSFETs - Single from Infineon Technologies. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, IPS80R600P7AKMA1 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 600mOhm @ 3.4A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 170µA
- Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 500 V
- FET Feature: -
- Power Dissipation (Max): 60W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO251-3-342
- Package / Case: TO-251-3 Stub Leads, IPak
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