IPT020N10N5ATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 100V 31A/260A 8HSOF
$7.37
Available to order
Reference Price (USD)
1+
$7.37000
500+
$7.2963
1000+
$7.2226
1500+
$7.1489
2000+
$7.0752
2500+
$7.0015
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose IPT020N10N5ATMA1 by Infineon Technologies. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with IPT020N10N5ATMA1 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 260A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 2mOhm @ 150A, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 202µA
- Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 273W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HSOF-8-1
- Package / Case: 8-PowerSFN
Related Products
Toshiba Semiconductor and Storage
TPH6400ENH,L1Q
Texas Instruments
CSD15380F3T
Infineon Technologies
IMW65R027M1HXKSA1
Fairchild Semiconductor
HUFA76639P3
Microchip Technology
APTM100UM45DAG
Fairchild Semiconductor
FDP6670AL
Infineon Technologies
AUIRFB4410
Panjit International Inc.
PJD7NA65_R2_00001
Rectron USA
RM10N100LD
Nexperia USA Inc.