IPT026N10N5ATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 100V 27A/202A 8HSOF
$6.26
Available to order
Reference Price (USD)
1+
$6.26000
500+
$6.1974
1000+
$6.1348
1500+
$6.0722
2000+
$6.0096
2500+
$5.947
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with IPT026N10N5ATMA1, a high-quality Transistors - FETs, MOSFETs - Single from Infineon Technologies. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, IPT026N10N5ATMA1 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 202A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 2.6mOhm @ 150A, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 158µA
- Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 214W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HSOF-8-1
- Package / Case: 8-PowerSFN
Related Products
Infineon Technologies
AUIRFR2407TRL
STMicroelectronics
STW23N85K5
IXYS
IXFH26N50P
Toshiba Semiconductor and Storage
SSM3J15FU,LF
Nexperia USA Inc.
PMV37ENER
Rohm Semiconductor
R6020FNJTL
Infineon Technologies
IRFR3707ZTRPBF
STMicroelectronics
STI55NF03L
Vishay Siliconix
SIDR622DP-T1-GE3
Fairchild Semiconductor