IPT60R065S7XTMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 600V 8A 8HSOF
$7.56
Available to order
Reference Price (USD)
1+
$7.56000
500+
$7.4844
1000+
$7.4088
1500+
$7.3332
2000+
$7.2576
2500+
$7.182
Exquisite packaging
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Discover high-performance IPT60R065S7XTMA1 from Infineon Technologies, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, IPT60R065S7XTMA1 delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 12V
- Rds On (Max) @ Id, Vgs: 65mOhm @ 8A, 12V
- Vgs(th) (Max) @ Id: 4.5V @ 490µA
- Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 12 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1932 pF @ 300 V
- FET Feature: -
- Power Dissipation (Max): 167W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HSOF-8-2
- Package / Case: 8-PowerSFN
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