IPT60R102G7XTMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 650V 23A 8HSOF
$7.37
Available to order
Reference Price (USD)
2,000+
$2.96185
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with IPT60R102G7XTMA1, a reliable Transistors - FETs, MOSFETs - Single by Infineon Technologies. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, IPT60R102G7XTMA1 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 102mOhm @ 7.8A, 10V
- Vgs(th) (Max) @ Id: 4V @ 390µA
- Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 141W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HSOF-8-2
- Package / Case: 8-PowerSFN
Related Products
Rohm Semiconductor
R6003KND3TL1
onsemi
FDS6612A
onsemi
FQA24N60
Infineon Technologies
IPB100N06S3-04
onsemi
FQD11P06TM
Infineon Technologies
BSZ100N03LSGATMA1
IXYS
IXTY8N70X2
Vishay Siliconix
IRFBE30PBF
Diodes Incorporated
DMN3033LSN-7
onsemi